The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Mar. 20, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Nai-Chia Chen, Hsinchu, TW;

Chun-Li Chou, Jhubei, TW;

Yen-Chiu Kuo, Tainan, TW;

Yu-Li Cheng, Tainan, TW;

Chun-Hung Chao, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76813 (2013.01); H01L 21/76832 (2013.01); H01L 21/76883 (2013.01); H01L 21/76834 (2013.01); H01L 2221/1047 (2013.01);
Abstract

A semiconductor device and method of manufacture comprise placing an etch stop layer of a material such as aluminum oxide over a conductive element, placing a dielectric layer over the etch stop layer, and placing a hardmask of a material such as titanium nitride over the dielectric layer. Openings are formed to the etch stop layer, the hardmask material is selectively removed, and the openings are then the material of the etch stop layer is then selectively removed to extend the openings through the etch stop layer.


Find Patent Forward Citations

Loading…