The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Jun. 06, 2018
Applicant:

Screen Holdings Co., Ltd., Kyoto-shi, Kyoto, JP;

Inventor:

Yukio Ono, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/67 (2006.01); H01L 21/265 (2006.01); H01L 21/687 (2006.01); H01L 21/268 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); H01L 21/265 (2013.01); H01L 21/2686 (2013.01); H01L 21/67115 (2013.01); H01L 21/67248 (2013.01); H01L 21/6875 (2013.01); H01L 21/68714 (2013.01);
Abstract

A semiconductor wafer to be treated is placed on a susceptor made of quartz installed in a chamber, and is heated by light irradiation from halogen lamps. Before the first semiconductor wafer of a production lot is transported into the chamber, a preheating substrate is placed on the susceptor. Then, the preheating substrate is heated by light irradiation from the halogen lamps to preheat the susceptor. The susceptor is heated to a preheating temperature higher than a stable temperature when the semiconductor wafers of the production lot are continuously treated. This enables a structure in the chamber, other than the susceptor, to be preheated to a temperature during steady treatment of the semiconductor wafer in a short time, so that it is possible to eliminate dummy running for heating the structure in the chamber by applying heating treatment to a plurality of dummy wafers.


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