The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Nov. 20, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Abraham Arceo de la Pena, Albany, NY (US);

Ekmini Anuja De Silva, Slingerlands, NY (US);

Nelson Felix, Slingerlands, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/3215 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); H01L 21/0234 (2013.01); H01L 21/02356 (2013.01); H01L 21/02592 (2013.01); H01L 21/0332 (2013.01); H01L 21/32055 (2013.01); H01L 21/32155 (2013.01); H01L 21/76826 (2013.01);
Abstract

The invention herein includes enhancing the surface of an amorphous silicon hardmask through implantation of nonpolar, hydrophobic elements, resulting in increased hydrophobicity and increased resist adhesion of the amorphous silicon surface. According to the invention, implanting the hydrophobic elements may involve introduction of the hydrophobic elements into the surface of the amorphous silicon by way of low energy implantation and plasma treatment. The implanted hydrophobic element may be Boron, Xenon, Fluorine, Phosphorus, a combination thereof, or other hydrophobic elements. According to the invention, the surface of the amorphous silicon is enhanced with 10-15% hydrophobic element, however in other embodiments, this composition may be adjusted as needed. In any case, however, the invention herein includes maintaining an etch selectivity of the bulk amorphous silicon hardmask.


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