The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Mar. 10, 2017
Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Tsuyoshi Ogami, Naka, JP;

Tatsuo Hashimoto, Akashi, JP;

Natsuki Ichimiya, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23B 27/14 (2006.01); C23C 14/06 (2006.01); B23F 21/00 (2006.01); B23C 5/16 (2006.01); B23B 51/00 (2006.01);
U.S. Cl.
CPC ...
B23B 27/148 (2013.01); B23B 27/14 (2013.01); B23B 51/00 (2013.01); B23C 5/16 (2013.01); B23F 21/00 (2013.01); C23C 14/06 (2013.01); C23C 14/0641 (2013.01); B23B 2226/125 (2013.01); B23B 2228/105 (2013.01);
Abstract

Provided is a surface-coated cutting tool including: a cutting tool body and a hard coating layer on a surface of the cutting tool body, wherein the hard coating layer includes a complex nitride layer of Al, Cr, Si, and Cu, the complex nitride layer of Al, Cr, Si, and Cu includes a main phase, and CrSi-rich particles and Al-rich particles that are dispersed in the main phase, the main phase satisfies 0.15≤α≤0.40, 0.05≤β≤0.20, 0.005≤γ≤0.05, and 0.45≤x≤0.60, the CrSi-rich particles satisfy 0.20≤α≤0.55, 0.20≤β≤0.55, 0≤γ≤0.10, and 0.02≤x≤0.35, the Al-rich particles satisfy 0.10≤α≤0.25, 0.05≤β≤0.25, 0≤γ≤0.10, and 0.02≤x≤0.35 in a composition formula: (AlCrSiCu)N), and an occupancy area ratio of the CrSi-rich particles having a major axis of 100 nm or more is 0.20 to 2.0 area %; and an occupancy area ratio of the Al-rich particles having a major axis of 100 nm or more is 0.50 to 3.0 area %.


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