The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Mar. 07, 2019
Applicant:
Silanna Uv Technologies Pte Ltd, Singapore, SG;
Inventor:
Norbert Krause, Hawthorne, AU;
Assignee:
Silanna UV Technologies Pte Ltd, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/18 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/36 (2010.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 33/18 (2013.01); H01L 33/0041 (2013.01); H01L 33/0062 (2013.01); H01L 33/0075 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01); H01L 33/36 (2013.01); H01L 2933/0016 (2013.01);
Abstract
Light emitting device and methods for forming the devices include a substrate and a nanowire placed on the substrate, where the nanowire comprises a core made of a semiconductor material. A cladding encloses the nanowire and has a breakdown voltage larger than a breakdown voltage of the core. A source of an electric field is provided, where the core is at least partially aligned with and lies at least partially within the electric field such that a cycling of the electric field creates charge separation and electron-hole recombination in the core.