The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Oct. 08, 2019
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Poren Tang, Beijing, CN;
Abstract
Tunnel field-effect transistors are provided. A tunnel field-effect transistor (TFET) includes a semiconductor substrate; a gate structure having a first side and an opposing second side formed on the semiconductor substrate. A first doped source/drain layer is formed in the semiconductor substrate at the first side of the gate structure. The first doped source/drain layer is doped with a first type of doping ions and a first contact interface between the first doped source/drain layer and a channel region of the semiconductor substrate has a plurality of protruding structures protruding toward the channel region under the gate structure. A second doped source/drain layer in the semiconductor substrate at the second side of the gate structure. The second doped source/drain layer is doped with a second type of doping ions having a conductive type opposite to the first source/drain doping layer.