Air-gap containing metal interconnects

Abstract

Air-gap containing metal interconnects with selectively-deposited dielectric material are provided. In one aspect, a method of forming an interconnect structure with air-gaps includes: forming interconnect metal lines separated from a first dielectric by a liner and a barrier layer; depositing a capping layer and an inhibitor layer over the interconnect metal lines; patterning the capping layer, inhibitor layer and first dielectric to form the air-gaps between the interconnect metal lines; selectively depositing a second dielectric to form a bridge of the second dielectric over/pinching off the air-gaps, wherein the barrier layer inhibits deposition of the second dielectric along the sidewalls of the interconnect metal lines, and the inhibitor layer inhibits deposition of the second dielectric on top of the interconnect metal lines. An interconnect structure is also provided.