IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10748784 B1

PDFFull Text
Date of Patent:
Aug. 18, 2020

Filed:

Jul. 27, 2018

Field effect transistor, method for manufacturing same, display element, display device, and system

Applicants:

Sadanori Arae, Kanagawa, JP;

Naoyuki Ueda, Kanagawa, JP;

Yuki Nakamura, Tokyo, JP;

Yukiko Abe, Kanagawa, JP;

Shinji Matsumoto, Kanagawa, JP;

Yuji Sone, Kanagawa, JP;

Ryoichi Saotome, Kanagawa, JP;

Minehide Kusayanagi, Kanagawa, JP;

Inventors:

Sadanori Arae, Kanagawa, JP;

Naoyuki Ueda, Kanagawa, JP;

Yuki Nakamura, Tokyo, JP;

Yukiko Abe, Kanagawa, JP;

Shinji Matsumoto, Kanagawa, JP;

Yuji Sone, Kanagawa, JP;

Ryoichi Saotome, Kanagawa, JP;

Minehide Kusayanagi, Kanagawa, JP;

Assignee:

Ricoh Company, Ltd., Tokyo, JP;

Attorney:

IPUSA, PLLC

Primary Examiner:

Natalia A Gondarenko

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/441 (2006.01); H01L 21/4763 (2006.01); H01L 29/417 (2006.01); H01L 21/3213 (2006.01); H01L 29/45 (2006.01); H01L 29/423 (2006.01); G02F 1/1368 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/47635 (2013.01); H01L 21/02192 (2013.01); H01L 21/02194 (2013.01); H01L 21/32134 (2013.01); H01L 21/441 (2013.01); H01L 27/1225 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); H01L 29/4958 (2013.01); H01L 29/517 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78609 (2013.01); H01L 29/78693 (2013.01); G02F 1/1368 (2013.01); H01L 27/3262 (2013.01);
Abstract

A method is provided for manufacturing a field effect transistor that includes a gate insulating layer and an electrode including a first conductive film and a second conductive film successively laminated on a predetermined surface of the gate insulating layer. The method includes forming an oxide film including element A, which is an alkaline earth metal, and element B, which is at least one of Ga, Sc, Y and a lanthanide, as the gate insulating layer; forming a first conductive film that dissolves in an organic alkaline solution on the oxide film; forming a second conductive film on the first conductive film; etching the second conductive film with an etching solution having a higher etch rate for the second conductive film as compared with that for the first conductive film; and etching the first conductive film with the organic alkaline solution using the second conductive film as a mask.

Find Patent Forward Citations

Loading…