The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Sep. 10, 2018
Applicant:

Honeywell International Inc., Morris Plains, NJ (US);

Inventors:

Desaraju Varaprasad, Dublin, CA (US);

Songyuan Xie, E. Palo Alto, CA (US);

Assignee:

Honeywell International, Inc., Morris Plains, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/027 (2006.01); B08B 7/00 (2006.01); B08B 7/04 (2006.01); B08B 3/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0206 (2013.01); B08B 3/08 (2013.01); B08B 7/0085 (2013.01); B08B 7/04 (2013.01); H01L 21/02057 (2013.01); H01L 21/0273 (2013.01); B08B 2220/04 (2013.01);
Abstract

A method for preventing the collapse of patterned, high aspect ratio features formed in semiconductor substrates upon removal of wash solutions of the type used to clean etch residues from the spaces between the features. In the present method, the spaces are at least partially filled with a displacement solution, such as via spin coating, to substantially displace the wash solution. The displacement solution includes at least one solvent and at least one fill material which is a polyalkene carbonate (PAC) and/or a saccharide. The solvent is then volatized to deposit the fill material in substantially solid form within the spaces. The fill material may be removed by thermal degradation via heat treatment, wherein the need for removal of the fill material by plasma ashing is obviated in order to prevent or mitigate silicon loss.


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