The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Sep. 05, 2016
Applicants:
Mark F Eaton, Austin, TX (US);
Robert J. Hollingsworth, Austin, TX (US);
Inventors:
Mark F Eaton, Austin, TX (US);
Robert J. Hollingsworth, Austin, TX (US);
Assignee:
STELLARRAY, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 35/06 (2006.01); H01J 35/08 (2006.01); H01J 29/08 (2006.01); G03F 7/20 (2006.01); G21K 1/06 (2006.01);
U.S. Cl.
CPC ...
H01J 35/08 (2013.01); G03F 7/7005 (2013.01); H01J 29/085 (2013.01); H01J 35/06 (2013.01); H01J 35/112 (2019.05); G21K 1/067 (2013.01); G21K 2201/067 (2013.01); H01J 2235/062 (2013.01); H01J 2235/068 (2013.01); H01J 2235/086 (2013.01);
Abstract
An efficient source of EUV or SXR flux uses multiple e-beams from multiple cathodes to impact a wide anode target with a flux-generating surface to generate flux over a wide area. The conversion efficiency of e-beam power to flux power may be improved by the direction of the e-beams towards the anode target at shallow or grazing incidence angles or the use of mirrored anode surfaces which reflect EUV or SXR. The source is enclosed in a vacuum chamber and performs work such as the penetration of photoresist on a semiconductor wafer in vacuum.