The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Oct. 31, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Makoto Kitagawa, Boise, ID (US);

Kerry Tedrow, Folsom, CA (US);

Assignee:

MIcron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 7/06 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0064 (2013.01); G11C 13/004 (2013.01); G11C 7/062 (2013.01); G11C 11/5614 (2013.01); G11C 13/0011 (2013.01); G11C 2013/0054 (2013.01); G11C 2213/79 (2013.01);
Abstract

Memory sense amplifiers and memory verification methods are described. According to one aspect, a memory sense amplifier includes a first input coupled with a memory element of a memory cell, wherein the memory element has different memory states at different moments in time, a second input configured to receive a reference signal, modification circuitry configured to provide a data signal at the first input from the memory element having a plurality of different voltages corresponding to respective ones of different memory states of the memory cell at the different moments in time, and comparison circuitry coupled with the modification circuitry and configured to compare the data signal and the reference signal at the different moments in time and to provide an output signal indicative of the memory state of the memory cell at the different moments in time as a result of the comparison to implement a plurality of verify operations of the memory states of the memory cell at the different moments in time.


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