The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

May. 09, 2016
Applicant:

Synopsys, Inc., Mountain View, CA (US);

Inventor:

David Thomas Reid, Glasgow, GB;

Assignee:

Synopsys, Inc., Mountain View, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 30/20 (2020.01); G06F 11/34 (2006.01); G06F 30/367 (2020.01);
U.S. Cl.
CPC ...
G06F 30/20 (2020.01); G06F 11/3409 (2013.01); G06F 30/367 (2020.01);
Abstract

A method for generating semiconductor device model parameters includes receiving semiconductor device performance data of statistical instances of semiconductor devices, for a plurality of coordinates in a process space with dimensions of process-dependent device parameters Model parameters are extracted to produce individual model instances, each corresponding to the respective statistical instances for the coordinates in the process space. Statistics of the extracted model parameters are modeled by processing the individual model instances to determine, for each coordinate in the process space, moments describing non-normal marginal distributions of the extracted model parameters and correlations between the extracted model parameters. Semiconductor device model parameters are generated for use in simulating a circuit using the determined moments and the determined correlations, for a selected coordinate in the process space.


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