The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

May. 10, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Michael V. Ho, Allen, TX (US);

Ravi Kiran Kandikonda, Frisco, TX (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0659 (2013.01); G06F 3/0604 (2013.01); G06F 3/0625 (2013.01); G06F 3/0673 (2013.01);
Abstract

A dynamic random-access memory (DRAM) device includes memory banks configured to store data and provide access to the stored data; and a data control circuit coupled to the memory banks, the data control circuit configured to: determine a pointer based on a received command, wherein the pointer corresponds to a target memory bank associated with the received command, and route a set of bits to or from the target memory bank using the pointer. In the long burst length and page mode operations where the array access is targeted in certain Bank Group, the pointer is generated and then allow the groups of data bits flowing through the center freely. This pseudo flow through scheme is low power and fast speed by removing the control of gating commands at each stage of the data path during Read and Write operations.


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