The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Apr. 28, 2009
Applicants:
Senthil Kumar Ramadas, Singapore, SG;
Zin MA Shwe, Singapore, SG;
Inventors:
Senthil Kumar Ramadas, Singapore, SG;
Zin Ma Shwe, Singapore, SG;
Assignee:
Agency for Science, Technology and Research, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 1/06 (2006.01); C23C 14/00 (2006.01); H01L 23/00 (2006.01); H01L 31/0216 (2014.01); H01L 51/44 (2006.01); C23C 14/08 (2006.01); C23C 14/06 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0073 (2013.01); C23C 14/0084 (2013.01); C23C 14/0641 (2013.01); C23C 14/08 (2013.01); H01L 23/564 (2013.01); H01L 31/02167 (2013.01); H01L 51/448 (2013.01); H01L 51/5256 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/12044 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11); Y10T 428/239 (2015.01); Y10T 428/2495 (2015.01); Y10T 428/24975 (2015.01); Y10T 428/265 (2015.01); Y10T 428/3154 (2015.04); Y10T 428/31507 (2015.04); Y10T 428/31511 (2015.04); Y10T 428/31609 (2015.04); Y10T 428/31663 (2015.04); Y10T 428/31721 (2015.04); Y10T 428/31739 (2015.04); Y10T 428/31765 (2015.04); Y10T 428/31786 (2015.04); Y10T 428/31935 (2015.04); Y10T 428/31938 (2015.04); Y10T 428/31971 (2015.04);
Abstract
The present invention refers to a graded barrier film comprising a layered structure, wherein the layered structure comprises a first layer consisting of metal oxide; an intermediate layer consisting of metal nitride or metal oxynitride which is arranged on the first layer; and a third layer consisting of a metal oxide which is arranged on the intermediate layer. The present invention further refers to a sputtering method for manufacturing this graded barrier film and a device encapsulated with this graded barrier film.