The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Jun. 13, 2019
Applicant:

Invensense, Inc., San Jose, CA (US);

Inventors:

Daesung Lee, San Jose, CA (US);

Dongyang Kang, San Jose, CA (US);

Chienlu Chang, Los Altos, CA (US);

Bongsang Kim, Mountain View, CA (US);

Alan Cuthbertson, San Jose, CA (US);

Assignee:

InvenSense, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/02 (2006.01); B81C 1/00 (2006.01); B81C 3/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/02 (2013.01); B81C 1/00269 (2013.01); B81C 1/00333 (2013.01); B81C 1/00388 (2013.01); B81C 1/00547 (2013.01); B81C 3/001 (2013.01); B81C 2201/0197 (2013.01); B81C 2203/0118 (2013.01); B81C 2203/03 (2013.01);
Abstract

Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.


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