Phase change memory with a patterning scheme for tantalum nitride and silicon nitride layers

Abstract

A method of forming a phase change memory device is provided. The method includes depositing an electrode layer on a phase change material core, and forming a sacrificial layer on the electrode layer. The method further includes depositing a planarization layer on the sacrificial layer, and depositing an anti-reflective coating on the planarization layer. The method further includes forming a template on the anti-reflective coating, and removing a portion of the anti-reflective coating, a portion of the planarization layer, and a portion of the sacrificial layer to form a reduced height sacrificial layer and a sacrificial layer section beneath the planarization layer section. The method further includes removing the anti-reflective coating section and planarization layer section to expose the sacrificial layer section, and removing the reduced height sacrificial layer and a portion of the electrode layer to form a top electrode on the phase change material core.