logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10741656 B1

PDFFull Text
Date of Patent:
Aug. 11, 2020

Filed:

Sep. 04, 2018

Wraparound contact surrounding source/drain regions of integrated circuit structures and method of forming same

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Hui Zang, Guilderland, NY (US);

Ruilong Xie, Schenectady, NY (US);

Shesh M. Pandey, Saratoga Springs, NY (US);

Laertis Economikos, Wappingers Falls, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:

Francois Pagette

Hoffman Warnick LLC

Primary Examiner:

Long Pham

Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/32134 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01);
Abstract

This disclosure is directed to an integrated circuit (IC) structure. The IC structure may include a semiconductor substrate having a first fin and a second fin spaced from the first fin; a first source/drain region in the first fin, the first source/drain region encompassing a top surface and two opposing lateral sides of the first fin; a second source/drain region in the second fin, the second source/drain encompassing a top surface and two opposing lateral sides of the second fin; and a metal contact extending over the first source/drain region and the second source/drain region and surrounding the top surface and at least a portion of the two opposing lateral sides of each of the first and the second source/drain regions.

Find Patent Forward Citations

Zang, Hui. (2020). Wraparound contact surrounding source/drain regions of integrated circuit structures and method of forming same (U.S. Patent No. 10741656). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10741656

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…