The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Oct. 03, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Hui Zang, Guilderland, NY (US);

Laertis Economikos, Wappingers Falls, NY (US);

Shesh Mani Pandey, Saratoga Springs, NY (US);

Chanro Park, Clifton Park, NY (US);

Ruilong Xie, Schenectady, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/762 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/76224 (2013.01); H01L 21/823468 (2013.01); H01L 27/0886 (2013.01); H01L 29/41791 (2013.01); H01L 29/4925 (2013.01); H01L 29/4958 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7856 (2013.01); H01L 2029/7858 (2013.01);
Abstract

Processes form integrated circuit apparatuses that include parallel fins, wherein the fins are patterned in a first direction. Parallel gate structures intersect the fins in a second direction perpendicular to the first direction, wherein the gate structures have a lower portion adjacent to the fins and an upper portion distal to the fins. Source/drain structures are positioned on the fins between the gate structures. Source/drain contacts are positioned on the source/drain structures and multiple insulator layers are positioned between the gate structures and the source/drain contacts. Additional upper sidewall spacers are positioned between the upper portion of the gate structures and the multiple insulator layers.


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