The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Oct. 19, 2018
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); H01L 27/115 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/0212 (2013.01); H01L 21/02175 (2013.01); H01L 21/02274 (2013.01); H01L 21/31144 (2013.01); H01L 21/32133 (2013.01); H01L 21/32137 (2013.01); H01L 21/67069 (2013.01); H01L 27/115 (2013.01);
Abstract
Methods and apparatus for etching a high aspect ratio feature in a stack on a substrate are provided. The feature may be formed in the process of forming a 3D NAND device. Typically, the stack includes alternating layers of material such as silicon oxide and silicon nitride or silicon oxide and polysilicon. WFis provided in the etch chemistry, which substantially reduces or eliminates problematic sidewall notching. Advantageously, this improvement in sidewall notching does not introduce other tradeoffs such as increased bowing, decreased selectivity, increased capping, or decreased etch rate.