The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Aug. 31, 2017
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Paul Frank, Villach, AT;

Gretchen Adema, Raleigh, NC (US);

Thomas Bertaud, Villach, AT;

Michael Ehmann, Villach, AT;

Eric Graetz, Klagenfurt, AT;

Kamil Karlovsky, Villach, AT;

Evelyn Napetschnig, Diex, AT;

Werner Robl, Regensburg, DE;

Tobias Schmidt, Regenstauf, DE;

Joachim Seifert, Schwerte, DE;

Frank Wagner, Ruethen, DE;

Stefan Woehlert, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/285 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H01L 21/2855 (2013.01); H01L 24/03 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 29/861 (2013.01); H01L 2224/29005 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29083 (2013.01); H01L 2224/29084 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/8309 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10271 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/3511 (2013.01);
Abstract

An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.


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