The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Jun. 09, 2019
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventor:

Dung Le Tan Hoang, Hsinchu County, TW;

Assignee:

eMemory Technology Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); H01L 27/112 (2006.01); G11C 17/18 (2006.01); H01L 23/525 (2006.01); H03K 3/356 (2006.01); H03K 17/284 (2006.01); H03K 19/00 (2006.01); H03K 19/0948 (2006.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G11C 17/18 (2013.01); H01L 23/5252 (2013.01); H01L 27/11206 (2013.01); H03K 3/356017 (2013.01); H03K 17/284 (2013.01); H03K 19/0016 (2013.01); H03K 19/0948 (2013.01);
Abstract

A memory cell includes a first anti-fuse element, a second anti-fuse element, and a selection circuit. The first anti-fuse element has a first terminal, a second terminal being floating, and a control terminal coupled to a first anti-fuse control line. The second anti-fuse element has a first terminal coupled to the first terminal of the first anti-fuse element, a second terminal being floating, and a control terminal coupled to a second anti-fuse control line. The selection circuit is coupled to the first terminal of the first anti-fuse element, the first terminal of the second anti-fuse element, and a source line. The selection circuit controls an electrical connection from the source line to the first terminal of the first anti-fuse element and the first terminal of the second anti-fuse element.


Find Patent Forward Citations

Hoang, Dung Le Tan. (2020). Memory cell with two anti-fuse elements (U.S. Patent No. 10741267). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10741267

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…