The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Feb. 19, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Kazutaka Takizawa, Yokohama, JP;

Yoshihisa Kojima, Kawasaki, JP;

Masaaki Niijima, Machida, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01); G11C 16/26 (2006.01); G06F 9/30 (2018.01); G11C 16/10 (2006.01); H01L 27/115 (2017.01); G06F 11/08 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G06F 9/3004 (2013.01); G06F 11/08 (2013.01); G11C 7/04 (2013.01); G11C 11/5642 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); H01L 27/115 (2013.01); G11C 16/0483 (2013.01);
Abstract

According to one embodiment, a memory system includes a first nonvolatile memory, and a controller. The controller executes, to the first memory, a program operation first and a first read operation next. The program operation is an operation including (i) acquiring a first temperature, (ii) storing the first temperature, and (iii) controlling the access circuit to set a threshold voltage of a memory cell transistor at a value corresponding to first data. The first read operation is an operation for (i) acquiring a second temperature, (ii) computing a difference between the second and the first temperature, (iii) acquiring a first determination voltage, (iv) correcting the first determination voltage according to the difference, and (v) controlling the first memory to acquire second data corresponding to the threshold voltage on the basis of a comparison between the threshold voltage of the memory cell transistor and the corrected first determination voltage.


Find Patent Forward Citations

Takizawa, Kazutaka. (2020). Memory system (U.S. Patent No. 10740101). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10740101

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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