The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Sep. 11, 2018
Applicant:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventors:

Guenole Lallement, Grenoble, FR;

Fady Abouzeid, Grenoble, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/20 (2006.01); H03K 19/0948 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H03K 19/00 (2006.01); G06F 30/30 (2020.01);
U.S. Cl.
CPC ...
G05F 3/205 (2013.01); G06F 30/30 (2020.01); H01L 27/0928 (2013.01); H01L 29/7851 (2013.01); H03K 19/0013 (2013.01); H03K 19/0948 (2013.01);
Abstract

A digital circuit includes logic circuitry formed by logic gates. Each logic gate includes a p-channel MOSFET and an n-channel MOSFET. A body bias generator circuit applies an n-body bias voltage to the n-body bias nodes of the p-channel MOSFETs and applies a p-body bias voltage to the p-body bias nodes of the n-channel MOSFETs. The body bias generator circuit operates in: a first mode to apply a ground supply voltage to the n-body bias nodes of the logic gates as the n-body bias voltage and apply a positive supply voltage to the p-body bias nodes of the logic gates as the p-body bias voltage; and a second mode to apply the positive supply voltage to the n-body bias nodes of the logic gates as the n-body bias voltage and apply the ground supply voltage to the p-body bias nodes of the logic gates as the p-body bias voltage.


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