The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Jun. 03, 2019
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Materials Co., Ltd., Yokohama-Shi, JP;
Makoto Hayashi, Chigasaki, JP;
Hiroyasu Kondo, Yokohama, JP;
Hiroshi Ichikawa, Miura, JP;
Yoshitaka Adachi, Yokohama, JP;
Yukihiro Fukuta, Yokohama, JP;
Kabushiki Kaisha Toshiba, Minato-Ku, JP;
Toshiba Materials Co., Ltd., Yokohama-Shi, JP;
Abstract
A scintillator array includes a first scintillator element, a second scintillator element, and a reflector provided between the first and second scintillator elements and having a width of 80 μm or less therebetween. Each scintillator element includes a polycrystal containing a rare earth oxysulfide phosphor, the polycrystal having a radiation incident surface of 1 mm or less×1 mm or less in area. An average crystal grain diameter of the polycrystal is not less than 5 μm nor more than 30 μm, the average crystal grain diameter being defined by an average intercept length of crystal grains in an observation image of the polycrystal with a scanning electron microscope. A maximum length or a maximum diameter of defects on the polycrystal is 40 μm or less.