The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Mar. 06, 2019
Applicant:
National Taiwan University, Taipei, TW;
Inventors:
Ching-Fuh Lin, Taipei, TW;
Hung-Chieh Chuang, Taipei, TW;
Meng-Jie Lin, Taipei, TW;
Po-Jui Huang, Taipei, TW;
Assignee:
National Taiwan University, Taipei, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/102 (2006.01); H01L 21/00 (2006.01); H01L 31/108 (2006.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1085 (2013.01); H01L 31/022408 (2013.01);
Abstract
A photodetector is provided with a metal-semiconductor junction for measuring infrared radiation. In another embodiment, the photodetector includes structures to achieve localized surface plasmon resonance at the metal-semiconductor junction stimulated by incident light. The photodetector hence has prompted response and broadband spectra region for photon detection. The photodetector can be used for detecting varied powers of incident light with wavelength from visible to mid-infrared region (300 nm˜20 μm).