The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Dec. 06, 2019
Applicant:
Sumitomo Electric Device Innovations, Inc., Kanagawa, JP;
Inventor:
Hajime Matsuda, Yokohama, JP;
Assignee:
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/778 (2006.01); H01L 29/51 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7783 (2013.01); H01L 21/0217 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/02458 (2013.01); H01L 21/02579 (2013.01); H01L 29/408 (2013.01); H01L 29/518 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01); H01L 29/42316 (2013.01);
Abstract
A process for forming a nitride semiconductor device is disclosed. The resulting semiconductor device includes a semiconductor stack with a top layer containing gallium (Ga) and nitrogen (N), electrodes of a source, a gate and a drain provided on the semiconductor stack, and a silicon nitride (SiN) film provided on the GaN layer between the drain electrode and the gate electrode but apart from the gate electrode. The SiN film has a silicon rich composition with a composition ratio of Si/N that is greater than ¾ and substantial oxygen contents.