The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Sep. 20, 2017
Applicant:
Advantest Corporation, Nerima-ku, Tokyo, JP;
Inventors:
Jun'ichi Okayasu, Tokyo, JP;
Taku Sato, Tokyo, JP;
Assignee:
ADVANTEST CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 23/29 (2006.01); H01L 21/8252 (2006.01); H01L 23/31 (2006.01); H01L 27/095 (2006.01); H01L 29/20 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 21/8252 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 27/095 (2013.01); H01L 29/0607 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 21/823456 (2013.01); H01L 29/2003 (2013.01);
Abstract
A compound semiconductor device includes a first transistor formed on a GaN epitaxial layer. The first transistor includes a gate electrode, a source electrode, a drain electrode, and a protective film covering them. End portions of the first transistor do not overhang the protective film, and the concentration of fluorine in the GaN epitaxial layer in the region where the gate electrode of the first transistor is formed is substantially zero.