The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Aug. 08, 2018
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Rhett T. Brewer, Santa Clara, CA (US);
Durai V. Ramaswamy, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/44 (2006.01); H01L 21/28 (2006.01); H01L 27/11521 (2017.01); H01L 29/51 (2006.01); H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); G11C 14/00 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); H01L 27/11524 (2017.01); H01L 21/24 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42324 (2013.01); G11C 14/0018 (2013.01); G11C 16/0408 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); H01L 21/44 (2013.01); H01L 27/11521 (2013.01); H01L 27/11524 (2013.01); H01L 29/40114 (2019.08); H01L 29/42332 (2013.01); H01L 29/4916 (2013.01); H01L 29/511 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/788 (2013.01); H01L 29/7881 (2013.01); H01L 21/244 (2013.01); H01L 21/265 (2013.01);
Abstract
Memory devices might include an array of memory cells and a control logic to control access of the array of memory cells, where a memory cell of the array of memory cells might include a first dielectric adjacent a semiconductor, a control gate, a second dielectric between the control gate and the first dielectric, and a charge storage structure between the first dielectric and the second dielectric, wherein the charge storage structure comprises a charge-storage material and a gettering agent.