The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Oct. 10, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Fan Huang, Kaohsiung, TW;
Hung-Chao Kao, Taipei, TW;
Yuan-Yang Hsiao, Taipei, TW;
Tsung-Chieh Hsiao, Changhua County, TW;
Hsiang-Ku Shen, Hsinchu, TW;
Hui-Chi Chen, Hsinchu County, TW;
Dian-Hau Chen, Hsinchu, TW;
Yen-Ming Chen, Hsin-Chu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A metal-insulator-metal (MIM) capacitor structure includes a semiconductor substrate and a bottom conductive layer above the semiconductor substrate. The bottom conductive layer has a slanted sidewall with respect to a top surface of the semiconductor substrate. The MIM capacitor structure further includes a top conductive layer above the bottom conductive layer. The top conductive layer has a vertical sidewall with respect to the top surface of the semiconductor substrate. The MIM capacitor structure further includes an insulating layer interposed between the bottom conductive layer and the top conductive layer. The insulating layer covers the slanted sidewall of the bottom conductive layer.