The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Sep. 24, 2019
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Assignee:
SanDisk Technologies LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/1159 (2017.01); H01L 27/11597 (2017.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 27/11519 (2017.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 27/11587 (2017.01);
U.S. Cl.
CPC ...
H01L 27/1159 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11597 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01); H01L 27/11587 (2013.01);
Abstract
A non-volatile memory system is provided that includes a plurality of NAND strings of non-volatile storage elements, each non-volatile storage element including a control gate, a tunneling layer, a floating gate, and a blocking layer including a ferroelectric material. The tunneling layer is disposed between the control gate and the floating gate, and the floating gate is disposed between the tunneling layer and the blocking layer.