The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Jan. 11, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Hung-Shu Huang, Taichung, TW;

Ming Chyi Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 27/11556 (2017.01); H01L 29/423 (2006.01); H01L 27/1158 (2017.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); G11C 16/0416 (2013.01); H01L 27/1158 (2013.01); H01L 29/42332 (2013.01); H01L 29/42336 (2013.01); H01L 29/66825 (2013.01);
Abstract

In some embodiments, the present disclosure relates to a flash memory structure. The flash memory structure has a source region and a drain region disposed within a substrate. A select gate is disposed over the substrate between the source region and the drain region, and a floating gate is disposed over the substrate between the select gate and the source region. A control gate is disposed over the floating gate. The floating gate has sidewalls that define protrusions extending downward from a lower surface of the floating gate to define a recess within a bottom of the floating gate.


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