The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Dec. 05, 2018
Applicant:

Murata Manufacturing Co., Ltd., Kyoto, JP;

Inventors:

Atsushi Kurokawa, Kyoto, JP;

Masayuki Aoike, Kyoto, JP;

Takayuki Tsutsui, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/49 (2006.01); H01L 23/14 (2006.01); H01L 23/29 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49 (2013.01); H01L 23/147 (2013.01); H01L 23/296 (2013.01); H01L 23/528 (2013.01); H01L 23/53228 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/92244 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19105 (2013.01);
Abstract

A wiring is disposed above operating regions of plural unit transistors arranged on a substrate in a first direction. An insulating film is disposed on the wiring. A cavity entirely overlapping with the wiring as viewed from above is formed in the insulating film. A metal member electrically connected to the wiring via the cavity is disposed on the insulating film. The centroid of the cavity is displaced from that of the operating region of the corresponding unit transistor in the first direction. When the cavity having a centroid the closest to the operating region of a unit transistor is defined as the closest proximity cavity, the amount of deviation of the centroid of the closest proximity cavity from that of the operating region of the corresponding unit transistor in the first direction becomes greater from the center to the ends of the arrangement direction of the unit transistors.


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