The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Dec. 28, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/42 (2006.01); H01L 21/223 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2236 (2013.01); H01J 37/32009 (2013.01); H01J 37/3266 (2013.01); H01J 37/32412 (2013.01); H01J 37/32449 (2013.01); H01J 37/32669 (2013.01); H01J 37/32715 (2013.01);
Abstract
A method includes receiving a semiconductor wafer into a chamber; generating a plasma within the chamber to accelerate particles toward the semiconductor wafer; generating a magnetic field above the semiconductor wafer by an electromagnetic structure contained within the chamber, wherein the electromagnetic structure comprises a plurality of electromagnetic elements; and adjusting the magnetic field, wherein the adjusting of the magnetic field includes moving positions of each of the plurality of electromagnetic elements independently.