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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10734222 B1

PDFFull Text
Date of Patent:
Aug. 04, 2020

Filed:

Jan. 17, 2020

Semiconductor stack

Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Taro Nishiguchi, Hyogo, JP;

Yu Saitoh, Osaka, JP;

Hirofumi Yamamoto, Hyogo, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;

Attorney:

IPUSA, PLLC

Primary Examiner:

David S Blum

Int. Cl.
CPC ...
H01L 31/0312 (2006.01); H01L 21/02 (2006.01); H01L 21/205 (2006.01); H01L 21/04 (2006.01); C03B 25/02 (2006.01); H01L 21/306 (2006.01); C30B 29/00 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); C03B 25/02 (2013.01); C30B 29/00 (2013.01); H01L 21/022 (2013.01); H01L 21/02008 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02609 (2013.01); H01L 21/02614 (2013.01); H01L 21/0445 (2013.01); H01L 21/205 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01);
Abstract

A semiconductor stack includes a substrate made of silicon carbide, and an epi layer disposed on the substrate and made of silicon carbide. An epi principal surface, which is a principal surface opposite to the substrate, of the epi layer is a carbon surface having an off angle of 4° or smaller relative to a c-plane. In the epi principal surface, a plurality of first recessed portions having a rectangular circumferential shape in a planar view is formed. Density of a second recessed portion that is formed in the first recessed portions and is a recessed portion deeper than the first recessed portions is lower than or equal to 10 cmin the epi principal surface.

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