The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Nov. 15, 2016
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Lee Chen, Cedar Creek, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); H01L 21/326 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32357 (2013.01); H01J 37/321 (2013.01); H01J 37/32027 (2013.01); H01J 37/3244 (2013.01); H01J 37/3255 (2013.01); H01J 37/32091 (2013.01); H01J 37/32192 (2013.01); H01J 37/32422 (2013.01); H01J 2237/3341 (2013.01); H01L 21/3065 (2013.01);
Abstract

A chemical processing system and a method of using the chemical processing system to treat a substrate with a mono-energetic space-charge neutralized neutral beam-activated chemical process is described. The chemical processing system comprises a first plasma chamber for forming a first plasma at a first plasma potential, and a second plasma chamber for forming a second plasma at a second plasma potential greater than the first plasma potential, wherein the second plasma is formed using electron flux from the first plasma. Further, the chemical processing system comprises a substrate holder configured to position a substrate in the second plasma chamber.


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