The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2020

Filed:

Aug. 27, 2018
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventors:

Yu Wu, New Taipei, TW;

Wei-Chiang Ong, Hsinchu, TW;

Chih-Yang Huang, Tainan, TW;

Assignee:

EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/30 (2006.01); G11C 16/04 (2006.01); G05F 3/24 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G05F 3/24 (2013.01); G11C 16/0433 (2013.01); G11C 16/14 (2013.01);
Abstract

A voltage driver includes a voltage divider, a first transistor and a second transistor. The voltage divider is connected with a first voltage source and a second voltage source, and generates a first bias voltage. A drain terminal of the first transistor is connected with a third voltage source. A gate terminal of the first transistor is connected with the voltage divider to receive the first bias voltage. A drain terminal of the second transistor is connected with a source terminal of the first transistor. A gate terminal of the second transistor receives a second bias voltage. A source terminal of the second transistor is connected with a fourth voltage source. The first transistor and the second transistor are of the same conductivity type and match each other. The source terminal of the first transistor generates an output voltage.


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