The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Jan. 29, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Hui-Lin Wang, Taipei, TW;
Yi-Wei Tseng, New Taipei, TW;
Meng-Jun Wang, Taichung, TW;
Chen-Yi Weng, New Taipei, TW;
Chin-Yang Hsieh, Tainan, TW;
Jing-Yin Jhang, Tainan, TW;
Yu-Ping Wang, Taoyuan, TW;
Chien-Ting Lin, Hsinchu, TW;
Ying-Cheng Liu, Tainan, TW;
Yi-An Shih, Changhua County, TW;
Yi-Hui Lee, Taipei, TW;
I-Ming Tseng, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A magneto-resistive random access memory (MRAM) cell includes a substrate having a dielectric layer disposed thereon, a conductive via disposed in the dielectric layer, and a cylindrical stack disposed on the conductive via. The cylindrical stack includes a bottom electrode, a magnetic tunneling junction (MTJ) layer on the bottom electrode, and a top electrode on the MTJ layer. A spacer layer is disposed on a sidewall of the cylindrical stack. The top electrode protrudes from a top surface of the spacer layer.