The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
May. 07, 2019
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Sheng Cho, Hsinchu County, TW;
Chen-Wei Pan, Hsinchu County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/735 (2006.01); H01L 29/732 (2006.01);
U.S. Cl.
CPC ...
H01L 29/73 (2013.01); H01L 29/0653 (2013.01); H01L 29/0692 (2013.01); H01L 29/0813 (2013.01); H01L 29/0821 (2013.01); H01L 29/735 (2013.01); H01L 29/732 (2013.01);
Abstract
A bipolar junction transistor includes: an emitter region; a base region; and a collector region, wherein each of the emitter region, the base region, and the collector region comprises fin-shaped structures. Preferably, the emitter region, the base region, and the collector region are disposed along a first direction and the fin-shaped structures are disposed along a second direction, in which the first direction is orthogonal to the second direction.