The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Sep. 28, 2018
Intel Corporation, Santa Clara, CA (US);
Siddharth K. Alur, Chandler, AZ (US);
Srinivas V. Pietambaram, Gilbert, AZ (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Described are example microelectronic devices including structures, such as build-up layers, formed of a non-homogeneous photoimageable dielectric material. The non-homogeneous photoimageable dielectric material includes two regions forming opposite surfaces of the material. A first region includes a first carbon content, and a second region located above the first region includes a second carbon content which is greater than that of the first region. The second region of the photoimageable dielectric material provides enhanced adhesion with metal that may be deposited above the material, such as a sputtered metal seed layer to facilitate subsequent deposition of an electroless metal over the non-homogeneous photoimageable dielectric material.