The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Feb. 09, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Michael Violette, Boise, ID (US);

Vladimir Mikhalev, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/266 (2006.01); H01L 21/265 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/027 (2006.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 29/1095 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); H01L 21/0274 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

Methods of forming a portion of an integrated circuit include forming a patterned mask having an opening and exposing a surface of a semiconductor material, forming a first doped region at a first level of the semiconductor material through the opening, and isotropically removing a portion of the patterned mask to increase a width of the opening. The methods further include forming a second doped region at a second level of the semiconductor region through the opening after isotropically removing the portion of the patterned mask, wherein the second level is closer to the surface of the semiconductor material than the first level.


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