The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Sep. 04, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Francis Chew, Boulder, CO (US);

Bruce A. Liikanen, Berthoud, CO (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/38 (2006.01); G11C 29/44 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 29/38 (2013.01); G11C 16/26 (2013.01); G11C 29/44 (2013.01); G11C 11/5642 (2013.01);
Abstract

A memory system can identify target memory units to characterize by generating Cumulative Distribution Function (CDF)-based data for each memory unit and analyzing the CDF-based data to identify target memory units that are exceptional. Such target memory units can be those with CDF-based data with extrinsic tails or that crosses an info limit threshold. The memory system can perform characterization processes for the target memory units, e.g. using an Auto Read Calibration (ARC) analysis or a Continuous Read Level Calibration (cRLC) analysis. A manufacturing process for the memory device can use results of the characterization processes, e.g. by mapping them to types of problems observed during testing. Alternatively, results of the characterization processes to can be used during operation of the memory device, e.g. to adjust the initial read voltage threshold, the read retry voltage values, or the order of read retry voltages used in data recovery.


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