The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Dec. 08, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Amit Berman, Ramat Gan, IL;

Junjin Kong, Yongin-si, KR;

Uri Beitler, Ramat Gan, IL;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 11/24 (2006.01); G11C 11/00 (2006.01); G06F 3/06 (2006.01); G11C 7/04 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01); G11C 16/30 (2006.01); G11C 11/4093 (2006.01);
U.S. Cl.
CPC ...
G11C 5/141 (2013.01); G06F 3/0619 (2013.01); G11C 5/143 (2013.01); G11C 7/04 (2013.01); G11C 11/005 (2013.01); G11C 11/24 (2013.01); G11C 11/5628 (2013.01); G11C 16/10 (2013.01); G11C 16/30 (2013.01); G11C 11/4093 (2013.01); G11C 2211/5641 (2013.01);
Abstract

A solid-state drive (SSD) may include a volatile buffer such as DRAM, a non-volatile memory (NVM) such as NAND Flash connected to the volatile buffer, and a capacitor connected to both, where the capacitor may have an energy capacity insufficient to supply the buffer and NVM using a normal supply voltage in a normal mode, but sufficient to supply the buffer and NVM using at least one reduced supply voltage in a temporary mode; and a related method may include programming data to the NVM by temporarily reducing the supply voltage to the NVM, and writing data to the NVM using the reduced supply voltage.


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