The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Dec. 11, 2018
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Bin Liu, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Shyue Seng Tan, Singapore, SG;
Ming Tsang Tsai, Singapore, SG;
Khee Yong Lim, Singapore, SG;
Kiok Boone Elgin Quek, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
A sensor device may include a substrate, first and second source regions, first and second drain regions, first and second channel regions, and first and second gate structures disposed over the first and second channel regions, respectively. The source regions and drain regions may be at least partially disposed within the substrate. The first and second source regions may have first and second source resistances, respectively, and the second source resistance may be higher than the first source resistance. The first gate structure may receive a solution, and a change in pH in the solution may cause a change in a first current flow through the first channel region. In turn, the second current flow through the second channel region may change to compensate for the change in the first current flow to maintain a constant current flow through the sensor device.