The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 2020

Filed:

Feb. 08, 2019
Applicant:

Massachusetts Institute of Technology, Cambridge, MA (US);

Inventors:

Emanuel M. Sachs, Newton, MA (US);

Tonio Buonassisi, Cambridge, MA (US);

Sarah Wieghold, Somerville, MA (US);

Zhe Liu, Xi'an, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); G01N 21/88 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9505 (2013.01); G01N 21/8806 (2013.01); H01L 21/67288 (2013.01); G01N 2201/06113 (2013.01);
Abstract

Embodiments related to systems and methods of crack detection in wafers (e.g., silicon wafers for photovoltaics, photovoltaic devices including silicon wafers) are disclosed. In some embodiments, an apparatus may include a light source configured to illuminate a side of a wafer and a camera directed towards a first face of the wafer. In some embodiments, a long axis of a field of view of the camera may be angled relative to a propagation direction of the light source. In some embodiments, at least a portion of the field of view of the camera is offset from the path of propagation of light emitted from the light source through the wafer. In some embodiments, at least a portion of a light beam may be oriented at a positive non-zero angle relative to the first face of the wafer, and a dimension of the light beam normal to the first face of the wafer may be larger than a thickness of the wafer.


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