The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Jan. 21, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Nico Caspary, Munich, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/04 (2006.01); C30B 29/06 (2006.01); C30B 15/20 (2006.01);
U.S. Cl.
CPC ...
C30B 15/04 (2013.01); C30B 15/20 (2013.01); C30B 29/06 (2013.01);
Abstract
A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon over an extraction time period. Boron is added to the molten silicon over at least part of the extraction time period.