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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10724134 B1

PDFFull Text
Date of Patent:
Jul. 28, 2020

Filed:

Nov. 20, 2014

Magnetic material sputtering target and method for producing same

Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventor:

Atsutoshi Arakawa, Ibaraki, JP;

Assignee:

JX NIPPON MINING & METALS CORPORATION, Tokyo, JP;

Attorney:

Howson & Howson LLP

Primary Examiner:

Jason Berman

Int. Cl.
CPC ...
C23C 14/34 (2006.01); C22C 19/07 (2006.01); C22C 33/02 (2006.01); C22C 38/00 (2006.01); C22C 38/10 (2006.01); H01F 41/18 (2006.01); C22C 1/04 (2006.01); H01L 43/12 (2006.01); H01J 37/34 (2006.01); H01L 43/10 (2006.01); B22F 3/10 (2006.01); H01J 37/32 (2006.01); C23C 14/14 (2006.01); C22C 30/00 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); B22F 3/10 (2013.01); C22C 1/0433 (2013.01); C22C 19/07 (2013.01); C22C 33/02 (2013.01); C22C 38/002 (2013.01); C22C 38/10 (2013.01); C23C 14/14 (2013.01); H01F 41/183 (2013.01); H01J 37/3255 (2013.01); H01J 37/3426 (2013.01); H01J 37/3429 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); C22C 30/00 (2013.01); C22C 2200/02 (2013.01);
Abstract

Provided is a magnetic material sputtering target produced from a sintered compact having a B content of 17 at % or more and 40 at % or less, and remainder being one or more elements selected from Co and Fe, wherein the target includes a B-rich phase and a B-poor phase, and a number of the B-rich phases in which a maximum inscribed circle having a diameter of 15 μm or more can be drawn is one or less. The B-rich phase is finely dispersed in the magnetic material sputtering target of the present invention, and the machinability of the target is consequently improved. Moreover, significant effects are yielded in that the generation of particles is inhibited and the yield in the production of thin films is improved when the target is used for sputtering with a magnetron sputtering equipment comprising a DC power supply.

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