The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2020
Filed:
Sep. 12, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsiang-Wei Lin, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a fin extending from an upper surface of a substrate, a gate stack disposed over the fin, a first dielectric material disposed on a sidewall of the gate stack, an epitaxy region disposed adjacent the fin, a second dielectric material disposed on the epitaxy region and on a sidewall of the first dielectric material, wherein the second dielectric material has a greater thickness in a first portion over the epitaxy region than in a second portion over the epitaxy region disposed closer to the substrate than the first portion, a third dielectric material disposed on the second dielectric material, and a conductive feature extending through the third dielectric material and the second dielectric material to contact the epitaxy region.