The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2020

Filed:

Nov. 20, 2018
Applicant:

Nexperia B.v., Nijmegen, NL;

Inventors:

Martin Roever, Hamburg, DE;

Soenke Habenicht, Hamburg, DE;

Stefan Berglund, Hamburg, DE;

Seong-Woo Bae, Hamburg, DE;

Assignee:

Nexperia B.V., Nijmegen, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/732 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/735 (2006.01); H01L 21/762 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); H01L 21/762 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0649 (2013.01); H01L 29/0804 (2013.01); H01L 29/1004 (2013.01); H01L 29/401 (2013.01); H01L 29/66272 (2013.01); H01L 29/732 (2013.01); H01L 29/735 (2013.01); H01L 29/78 (2013.01); H01L 21/2251 (2013.01);
Abstract

This disclosure relates to a semiconductor device structure and method of manufacturing a semiconductor device. The semiconductor device structure comprises a semiconductor substrate having an edge region laterally separated from a device region; an edge termination structure arranged on the semiconductor substrate; wherein the edge termination structure comprises: a first oxide layer arranged on the substrate to extend from the active region to the edge region; an isolation layer arranged on top of the first oxide layer; and a metal layer arranged to at least partially cover the isolation layer and wherein the metal layer is further arranged to extend from the isolation layer to contact the edge region.


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