The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2020
Filed:
Sep. 28, 2018
Sandisk Technologies Llc, Addison, TX (US);
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A lower source-level semiconductor layer, a sacrificial semiconductor layer, an upper source-level semiconductor layer, and an alternating stack of insulating layers and sacrificial material layers are sequentially formed over a substrate. An array of memory stack structures containing vertical semiconductor channels that extend through the alternating stack and into an upper portion of the lower source-level semiconductor layer is formed. A backside trench is formed through the alternating stack, and a source cavity is formed by removing the sacrificial semiconductor layer. A doped source contact layer is formed on each of the vertical semiconductor channels in the source cavity. A silicon nitride liner is formed on the doped source contact layer. The sacrificial material layers are replaced with electrically conductive layers. A dielectric wall structure is formed in the backside trench.