The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2020

Filed:

May. 11, 2018
Applicant:

Deca Technologies Inc., Tempe, AZ (US);

Inventor:

Christopher M. Scanlan, Chandler, AZ (US);

Assignee:

DECA TECHNOLOGIES INC., Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 21/683 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/367 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 21/4853 (2013.01); H01L 21/4882 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/3675 (2013.01); H01L 24/09 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H01L 25/0655 (2013.01); H01L 21/568 (2013.01); H01L 23/552 (2013.01); H01L 2221/68354 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73267 (2013.01); H01L 2924/15174 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/16251 (2013.01); H01L 2924/18162 (2013.01); H01L 2924/19105 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A semiconductor device includes a molded core unit that includes a first semiconductor die with conductive interconnects and a second semiconductor with conductive interconnects. The first semiconductor die and the second semiconductor die are encapsulated by a single encapsulant that contacts at least four sides surfaces and an active surface of the first semiconductor die and the second semiconductor die, as well as side surfaces of the conductive interconnects. The molded core unit further includes a fine-pitch build-up interconnect structure disposed over the encapsulant and coupled to the conductive interconnects of the first semiconductor die and the conductive interconnects of the second semiconductor die interconnected without a silicon interposer. The molded core unit can be mounted to an organic multi-layer substrate. A heat sink may be coupled to the back surfaces of the first semiconductor die and the second semiconductor die with a thermal interface material (TIM).


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